Aller au contenu principal

ArXiv

  • Pérovskite

Increased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes using Carbazole-Based Phosphonic Acid Interface Modifiers

Auteurs Gillian Shen, Yadong Zhang, Julisa Juarez, Hannah Contreras, Collin Sindt, Yiman Xu, Jessica Kline, Stephen Barlow, Elsa Reichmanis, Seth R. Marder, David S. Ginger

Résumé

We demonstrate the use of [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di-tert-butyl-9H-carbazol-9-yl)ethyl]phosphonic acid (t-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over 7-fold increase in brightness, achieving a brightness of 373,000 cd m−2, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ~1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >105 cd m−2. Steady-state and time-resolved photoluminescence measurements indicate these improvements are due to a combination of multiple factors, including reducing quenching of photoluminescence at the PEDOT:PSS interface and reducing photoluminescence efficiency loss at high levels of current density.

Produits associés