Other Semiconductors

Material quality is the crux in semiconductors development

Semiconductor materials are omnipresent in the electronics supply chain in various forms. They could be used as wafers, thin films, transistors and diodes, in microchips and solar cells. For every development or production step, the quality of the material, as well as its optoelectronic properties must be understood and qualified.

Hyperspectral imaging

To answer that need, hyperspectral imaging, both macro-and microscopic, provides rapid electroluminescence (EL), photoluminescence (PL), reflectance and transmittance maps. It was successfully employed to characterize different defects present in SiC pin diodes and to study the uniformity of optoelectronic properties in Perovskite, CIGS, CIS and GaAs solar cells.

Overcoming the limits of the current technologies

Most confocal point-by-point technologies limit the probed area. Hence, if we combine global imaging with hyperspectral imaging, we can analyze the optoelectronic properties in a record time. For instance, the intrinsic specificity of Raman scattering combined with hyperspectral microscopy confers the ability to measure the uniformity and morphology of a wide variety of materials rapidly over large areas. It also allows fast identification of the composition and stoichiometry, while providing spatial distribution of stresses and strains. For other cases, spatial observation of defects, constraints and optoelectronic properties can be made using both hyperspectral macro- and microscopy to acquire rapid electroluminescence (EL) and photoluminescence (PL) maps.

This technology was used to characterize various properties of chalcogenide glasses, GaAs and GeSn/Ge/Si thin films, the identification of MoS2 layers, and the analysis of constraints in a Si wafer covered by SiO2.

For more details and results from our collaborators, see the application notes below.